Planar voltage contrast test structure

ABSTRACT

An integrated circuit and e-beam testing method are disclosed. The integrated circuit includes a test structure with a ground grid, a metal pad having a space therein and positioned within the ground grid, and a metal line connected to the ground grid and positioned in the space. Structures for detecting open circuits and short circuits are described.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This is a divisional of application Ser. No. 10/703,285 filed Nov. 6,2003 now U.S. Pat. No. 7,160,741, which is hereby incorporated byreference thereto.

TECHNICAL FIELD

The present invention relates generally to semiconductor testing, andmore particularly to test structures used in such testing.

BACKGROUND ART

In the semiconductor integrated circuit (IC) industry, there is acontinuing demand for higher circuit packing densities. This demand ofincreased packing densities has led the semiconductor industry todevelop new materials and processes to achieve sub-micron devicedimensions. Manufacturing ICs at such minute dimensions adds morecomplexity to circuits and increases the demand for improved methods toinspect integrated circuits in various stages of their manufacture.

As design rules and process windows continue to shrink, IC manufacturersface many challenges in achieving and maintaining yields andprofitability while moving to new process technologies such as largerwafers, copper interconnect, and low-k dielectrics. Additionally,defects that were not relevant in the older, larger design rules havenow become problems as design rules are reduced to 0.13 μm geometriesand below.

Although inspection of such products at various stages of manufacture isvery important and can significantly improve production yield andproduct reliability, the increased complexity of ICs increases the costof such inspections, both in terms of expense and time. However, if adefect can be detected early in production, the cause of the defect canbe determined and corrected before a significant number of defective ICsare manufactured.

In order to overcome the problems posed by defective ICs, ICmanufacturers fabricate test structures. Such test structures are usedin defect analysis. The test structures are fabricated such that theyare sensitive to defects that occur in IC products, but are designed sothat the presence of defects is more readily ascertained. Such defecttest structures often are constructed on the same semiconductorsubstrate as the IC products.

Defect detecting systems frequently utilize charged particle beams. Insuch systems, a charged particle beam, such as an electron beam, isirradiated on defect test structures. The interaction of the electronbeam with features in the circuitry generates a number of signals invarying intensities, such as secondary electrons, back-scatteredelectrons, x-rays, etc. Typically, electron beam methods employsecondary electron signals for the well known “voltage contrast”technique for circuit defect detection.

The voltage contrast technique operates on the basis that differences inthe various locations of a test structure under examination causedifferences in secondary electron emission intensities. In one form ofinspection, the mismatched portion between the defective voltagecontrast image and the defect free one reveals the defect location.Thus, the potential state of the scanned area is acquired as a voltagecontrast image such that a low potential portion of, for example, awiring pattern might be displayed as bright (intensity of the secondaryelectron emission is high) and a high potential portion might bedisplayed as dark (lower intensity secondary electron emission).Alternatively, the system may be configured such that a low potentialportion might be displayed as dark and a high potential portion might bedisplayed as bright.

A secondary electron detector is used to measure the intensity of thesecondary electron emission that originates only at a path swept by ascanning electron beam. A defective portion can be identified from thepotential state of the portion under inspection. Semiconductor wafersare tested during manufacturing to ensure quality control. One waywafers can be tested is using an electron beam (e-beam) inspection tool,which detects, by way of irradiating a wafer with an electron beam,surface defects as well as so-called “voltage contrast defects” that canbe caused by defects in layers underlying the surface layer. Suchvoltage contrast occurs as a result of differential charge build-up onfeatures, such as metal landing pads. When negative charges accumulateon a feature, the resulting negative potential repels electrons, causingthe feature to appear bright under an electron microscope. In contrast,a positive charge build-up causes the feature to appear dark. In thisway, an e-beam tool can be used to derive, from the contrast of thereturn image, whether a defect such as an electrical short or openexists in the wafer. Thus, in such systems, the voltage contrast issimultaneously monitored for both defective and defect free circuits foreach IC manufactured.

Test structures usually are designed and manufactured to comply with thedesign rules used to manufacture the IC, therefore as the geometry sizesin ICs are reduced test structures become very small thereby reducingthe contrast in the area of defects under the influence of e-beamtesting equipment. Consequently, it becomes very difficult to perform areview of the defects detected and any associated failure analysis.

Existing test structure design uses a vertical structure approach inwhich the same test structure is repeated vertically in every metallayer of the IC. This test structure design is difficult to implement asICs use more layers of metal interconnect in higher density ICs.

Existing test structures also are designed to test for only one defecttype, such as an open circuit or a short circuit, resulting in limitedcapability.

Existing test structures additionally occupy a large amount of space ona wafer making it difficult to incorporate the test structures into theIC products. In addition, existing test structures tend to introduceelectrical noise and interference into the ICs being manufactured.

Solutions to these problems long have been sought but prior developmentshave not taught or suggested any solutions and, thus, solutions to theseproblems have long eluded those skilled in the art.

DISCLOSURE OF THE INVENTION

The present invention provides an integrated circuit using an e-beamtester comprising providing a ground grid. A metal pad having a spacetherein and positioned within the ground grid is provided. A metal lineconnected to the ground grid and positioned in the space is arranged todetect short circuits or open circuits when the integrated circuit isprocessed with the e-beam tester.

The metal line connected to the ground grid provides a metal line thatis not electrically connected to the metal pad, whereby, upon theoccurrence of an electrical short circuit between the metal line and themetal pad, the metal pad appears bright under the influence of thee-beam tester. The metal line connected to the ground grid provides ametal line that is electrically connected to the metal pad, whereby uponthe occurrence of an electrical open circuit between the metal line andthe metal pad, the metal pad appears dark under the influence of thee-beam tester. The metal line is at least one of a T-shaped line, anobtuse-angled line, a right-angled line, a straight line, a serpentineline, an interleaved comb, and combinations thereof.

The present invention provides test structures that are easier to reviewand analyze thereby increasing the ability to perform failure analysis.

The test structures of the present invention do not require verticalstacking in an IC, and additionally occupy a relatively small amount ofspace and therefore can be incorporated into available space in the ICproducts themselves.

The test structures of the present invention also are designed to testfor both open circuits and short circuits, resulting in enhancedcapability.

In addition, test structures manufactured in accordance with the presentinvention introduce less electrical noise and interference into the ICsbeing manufactured than existing test structures.

Certain embodiments of the invention have other advantages in additionto or in place of those mentioned above. The advantages will becomeapparent to those skilled in the art from a reading of the followingdetailed description when taken with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial plan view of a prior art layout of test structuresviewed from beneath a first metal layer arranged for detecting an opencircuit defect;

FIG. 2 is a cross-sectional view of FIG. 1 taken along line 2-2 of FIG.1 showing the arrangement of the vias connecting additional metallayers;

FIG. 3 is a partial plan view of a prior art layout of test structuresviewed from beneath a first metal layer arranged for detecting a shortcircuit defect;

FIG. 4 is a cross-sectional view of FIG. 3 taken along line 4-4 of FIG.3 showing the arrangement of the vias connecting additional metallayers;

FIG. 5 is an enlarged plan view of a first number of test structuresmanufactured in accordance with the present invention for detecting ashort circuit defect;

FIG. 6 is an enlarged plan view of a second number of test structuresmanufactured in accordance with the present invention for detecting anopen circuit defect;

FIG. 7 is an enlarged plan view of alternate test structuresmanufactured in accordance with the present invention; and

FIG. 8 is a flow chart of a method for testing an integrated circuitusing an e-beam tester in accordance with the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

In the following description, numerous specific details are given toprovide a thorough understanding of the invention. However, it will beapparent to one skilled in the art that the invention may be practicedwithout these specific details. In order to avoid obscuring the presentinvention, some well-known circuits, system configurations, and processsteps are not disclosed in detail.

Likewise, the drawings showing embodiments of the apparatus aresemi-diagrammatic and not to scale and, particularly, some of thedimensions are for the clarity of presentation and are shown greatlyexaggerated in the FIGs. Similarly, although the sectional views in thedrawings for ease of description, this arrangement in the FIGs. isarbitrary. Generally, the device can be operated in any orientation.

The term “horizontal” as used herein is defined as a plane parallel tothe conventional plane or surface of the integrated circuit substrate,regardless of its orientation. The term “vertical” refers to a directionperpendicular to the horizontal as just defined. Terms, such as “on”,“above”, “below”, “bottom”, “top”, “side” (as in “sidewall”), “higher”,“lower”, “over”, and “under”, are defined with respect to the horizontalplane.

The term “processing” as used herein includes deposition of material orphotoresist, patterning, exposure, development, etching, cleaning,and/or removal of the material or photoresist as required in forming adescribed structure.

Referring now to FIG. 1 therein is shown a partial plan view frombeneath a first metal layer 104 in an integrated circuit (IC) of a firstlayout 100 of a number of test structures 102 arranged for detecting anopen circuit defect in accordance with the prior art. The first layout100 includes the first metal layer 104, such as a ground plate. Thefirst metal layer 104 has a number of metal contacts 106 positionedaround the periphery of the first metal layer 104. The number of metalcontacts 106 is manufactured in accordance with relaxed design rules,for example, if the design rules specify a nominal critical dimension(CD), such as 0.13 microns, then the relaxed dimension for the number ofmetal contacts 106 is relaxed to about 0.24 microns.

The first layout 100 also includes the number of test structures 102positioned in the products (not shown) in the ICs under the first metallayer 104. The number of test structures 102 is positioned for detectionof an open circuit defect. A first number of vias 108 is positioned in asecond row 114 and a fourth row 118 of the first metal layer 104. Asecond number of vias 110 is positioned in the first row 112 and a thirdrow 116 of the first metal layer 104.

The number of test structures 102 is formed during the manufacture ofthe IC, such as at the time the associated metal layer is formed. Forexample, when the first metal layer 104 is formed in the IC, the numberof test structures 102 is formed in areas of the first layer of the ICthat are unused for other purposes in the IC. As additional metal layersare formed in the IC, additional numbers of test structures are formedin the additional layers of the IC. Existing test structures oftenoccupy a large amount of space making it impossible to incorporate thetest structures into the actual manufactured product.

Referring now to FIG. 2 therein is shown a cross-sectional view of FIG.1 taken along line 2-2 of FIG. 1 showing the arrangement of the of vias.A first via 202 connects the first metal layer 104 to a second metallayer 204. A second via 206 connects the second metal layer 204 to athird metal layer 208. A third via 210 connects the third metal layer208 to a fourth metal layer 212. The number of test structures 102 shownin FIG. 1 is positioned in unused areas of the circuitry between thevarious metal layers.

Each of the first number of vias 108 positioned beneath the second row114 and the fourth row 118 of the first metal layer 104, as shown inFIG. 1, connect the first metal layer 104 to the fourth metal layer 212through the first via 202, the second via 206, and the third via 210.The first via 202, the second via 206, and the third via 210 are in astacked arrangement. Each of the second number of vias 110 positionedbeneath the first row 112 and the third row 116 of the first metal layer104, shown in FIG. 1, connect the second metal layer 204 to the thirdmetal layer 208 through the second via 206. The third metal layer 208 isconnected to the fourth metal layer 212 through the third via 210.

Referring now to FIG. 3 therein is shown a partial plan view frombeneath a first metal layer 304 in an integrated circuit (IC) of asecond layout 300 of a number of test structures 302 arranged fordetecting an open circuit defect in accordance with the prior art. Thesecond layout 300 includes the first metal layer 304, such as a groundplate. The first metal layer 304 has a number of metal contacts 306around the periphery of the first metal layer 304. The number of metalcontacts 306 is manufactured in accordance with relaxed design rules,for example, if the design rules specify a nominal CD, such as 0.13microns, then the relaxed dimension for the number of metal contacts 306is relaxed to about 0.24 microns.

The second layout 300 also includes the second number of test structures302 positioned in the products (not shown) in the integrated circuits(ICs) under the first metal layer 404. The number of test structures 302is positioned for detection of an open circuit defect. A first number ofvias 308 is positioned in a second row 314 and a fourth row 318 of thefirst metal layer 304. A second number of vias 310 is positioned in thefirst row 312 and a third row 316 of the first metal layer 104. As isthe case with respect to test structures arranged to detect shortcircuit defects, existing test structures often occupy a large amount ofspace making it impossible to incorporate the test structures into theactual manufactured product.

Referring now to FIG. 4 therein is shown a cross-sectional view of FIG.3 taken along line 4-4 of FIG. 3 showing the arrangement of the of vias.A first via 402 connects the first metal layer 304 to a second metallayer 404. A second via 406 connects the second metal layer 404 to athird metal layer 408. A third via 410 connects the third metal layer408 to a fourth metal layer 412. The number of test structures 302 shownin FIG. 3 is positioned in unused areas of the circuitry between thevarious metal layers.

Each of the first number of vias 308 positioned beneath the second row314 and the fourth row 318 of the first metal layer 304, as shown inFIG. 3, connect the first metal layer 304 to a fourth metal layer 412through the first via 402, the second via 406 and the third via 410. Thefirst via 402, the second via 406, and the third via 410 are in astacked arrangement. Each of the second number of vias 310 positionedbeneath the first row 312 and the third row 316 of the first metal layer304, shown in FIG. 1, connect the second metal layer 404 to the thirdmetal layer 408 through the second via 406. The second via is connectedto the fourth metal layer 412 through the third via 410.

Referring now to FIG. 5 therein is shown an enlarged plan view of afirst number of test structures 500 manufactured in accordance with thepresent invention for detecting a short circuit defect. The first numberof test structures 500 includes a first test structure 502 comprising afirst metal pad 503 and a first metal line 504 having a “T-shaped”configuration. The first metal line 504 is not connected to the firstmetal pad 502, and is spaced from the first metal pad 503 by a firstspace 505. The first number of test structures 500 is small enough to bepositioned in a relatively small, unused portion of the IC therebyproviding IC designers increased flexibility in the positioning of thefirst number of test structures 500 while reducing the amount of spaceon a wafer for positioning of the first number of test structures 500.

A second test structure 506 includes a second metal pad 507 and a secondmetal line 508 having an obtuse angled configuration. The second metalline 508 is not connected to the second metal pad 507, and is spacedfrom the second metal pad 507 by a second space 509.

A third test structure 510 includes a third metal pad 511 and a thirdmetal line 512 having a right-angled configuration. The third metal line512 is not connected to the third metal pad 511, and is spaced from thethird metal pad 511 by a third space 513.

A fourth test structure 514 includes a fourth metal pad 515 and a fourthmetal line 516 having a straight configuration. Again, the fourth metalline 516 is not connected to the fourth metal pad, and is spaced fromthe fourth metal pad by a fourth space 518.

The first number of test structures 500 has a ground grid 520surrounding pairs of the first number of test structures 500. The groundgrid 520 provides a connection to electrical ground for the first metalline 504, the second metal line 508, the third metal line 512, and thefourth metal line 516. The ground grid 520 also reduces the effect ofany electrical noise or interference caused by the presence of the firstnumber of test structures 500 in an IC. Preferably, the ground grid 520is sized to be about three times the design rule for metal lines in aparticular IC. The ground grid 520 is connected to an electrical groundin a particular IC through corner bond pads (not shown) attached to thecorners of the ground grid 520.

Preferably, the first number of test structures 500 has metal lines andspaces sized relative to the design rules for the particular IC in whichthe first number of test structures 500 is being used. It has beendiscovered that the metal lines and spaces in the first number of teststructures 500 should be sized in relation to the design rules for aparticular IC. Preferably, the metal lines should be sized about twicethe design rule for metal lines. Preferably, the spaces should be sizedabout equal to the design rule for spaces. It also has been discoveredthat the ground grid 520 should be about three times the design rule formetal lines.

For example, if the design rules for a particular IC specify that metallines of 0.20 micron and spaces of 0.21 micron, the metal lines in thefirst number of test structures 500 preferably should be about 0.40micron, the spaces should be about 0.21 micron, and the ground gridshould be about 0.60 micron. The minimum pad size is in accordance withthe design rules.

In operation, if a metal line of one of the first number of teststructures 500 is touching its associated metal pad, there will be ashort circuit between the metal line and its associated metal pad. Theshort circuit will cause the entire metal pad to appear bright wheninspected by e-beam testing equipment as compared to any of the firstnumber of test structures 500 in which the metal line is not in contactwith its associated metal pad. The metal pad is larger than the size ofthe defect thereby making it easier to observe any defects that aredetected under the influence of the e-beam testing equipment.

Referring now to FIG. 6 therein is shown an enlarged plan view of asecond number of test structures 600 manufactured in accordance with thepresent invention for detecting an open circuit defect. The secondnumber of test structures 600 includes a fifth test structure 602comprising a fifth metal pad 603 and a fifth metal line 604 having a“T-shaped” configuration. The fifth metal line 604 is connected to thefifth metal pad 603, and is spaced from the fifth metal pad 603 by afifth space 605. The second number of test structures 600 also is smallenough to be positioned in a relatively small, unused portion of the ICthereby providing IC designers increased flexibility in the positioningof the second number of test structures 600 while reducing the amount ofspace on a wafer for positioning of the second number of test structures600.

A sixth test structure 606 includes a sixth metal pad 607 and a sixthmetal line 608 having an obtuse angled configuration. The sixth metalline 608 is connected to the sixth metal pad 607, and is spaced from thesixth metal pad 607 by a sixth space 609.

A seventh test structure 610 includes a seventh metal pad 611 and aseventh metal line 612 having a right-angled configuration. The seventhmetal line 612 is connected to the seventh metal pad 611, and is spacedfrom the seventh metal pad 611 by a seventh space 613.

An eighth test structure 614 includes an eighth metal pad 615 and aneighth metal line 616 having a straight configuration. Again, the eighthmetal line 616 is connected to the eighth metal pad 615, and is spacedfrom the eighth metal pad 615 by an eighth space 618.

The second number of test structures 600 has a ground grid 620surrounding pairs of the second number of test structures 600. Theground grid 620 provides a connection to electrical ground for the fifthmetal line 604, the sixth metal line 608, the seventh metal line 612,and the eighth metal line 616. The ground grid 620 also reduces theeffect of any electrical noise or interference caused by the presence ofthe second number of test structures 600 in an IC. Preferably, theground grid 620 is sized to be about three times the design rule formetal lines in a particular IC. The ground grid 620 is connected to anelectrical ground in a particular IC through corner bond pads (notshown) attached to the corners of the ground grid 620.

Preferably, the second number of test structures 600 has metal lines andspaces sized relative to the design rules for the particular IC in whichthe second number of test structures 600 is being used. It has beendiscovered that the metal lines in the second number of test structures600 should be about the same size as the design rule for metal lines,and that the spaces should be about twice the design rule for spaces ina particular IC. It also has been discovered that the ground grid 620should be about three times the design rule for metal lines.

For example, if the design rules for a particular IC specify metal linesof 0.20 micron and spaces of 0.21 micron, the metal lines in the secondnumber of test structures 600 preferably should be about 0.20 micron,the spaces should be about 0.42 micron, and the ground grid should beabout 0.60 micron. The minimum pad size is in accordance with the designrules.

In operation, if a metal line of one of the second number of teststructures 600 is broken, there will be an open circuit between thebroken metal line and its associated metal pad. The open circuit willcause the entire metal pad to appear dark when inspected by e-beamtesting equipment as compared to any of the second number of teststructures 600 in which the metal line is not broken. The metal pad islarger than the size of the defect thereby making it easier to observeany defects that are detected under the influence of the e-beam testingequipment.

Referring now to FIG. 7 therein is shown an enlarged plan view ofalternate test structures, referred to herein as a third number of teststructures 700, and manufactured in accordance with the presentinvention. A ninth test structure 702 includes a ninth metal pad 704 anda metal comb structure 705. The metal comb structure 705 has a firstportion 706 connected to the ninth metal pad 704 and a second portion710 connected to a ground grid 712 that surrounds the third number oftest structures 700. The first portion 706 and the second portion 710 ofthe metal comb structure 705 are interleaved and are not connected toeach other. The ninth test structure 702 is designed to detect a shortcircuit.

Preferably, the ninth test structures 702 has metal lines and spacessized relative to the design rules for the particular IC in which theninth test structure 702 is being used. It has been discovered that themetal lines in the ninth test structure 702 should be about twice thedesign rule for metal lines, and that the spaces should be about thesame as the design rule for spaces in a particular IC.

For example, if the design rules for a particular IC specify metal linesof 0.20 micron and spaces of 0.21 micron, the metal lines in the ninthtest structure 702 preferably should be about 0.40 micron, the spacesshould be about 0.21 micron, and the ground grid should be about 0.60micron. The minimum pad size is in accordance with the design rules.

In operation, if part of the first portion 706 contacts part of thesecond portion 710 causing an electrical short, the entire ninth metalpad 704 will appear bright when inspected by e-beam testing equipment ascompared to any of the ninth test structures 702 in which there is noshort circuit.

A tenth test structure 714 includes a tenth metal pad 716 and aserpentine metal line 718 connected to the tenth metal pad 716 at oneend. The other end of the serpentine metal line 718 is connected to theground grid 712 that surrounds the third number of test structures 700.The tenth test structure 714 is designed to detect an open circuit.

Preferably, the tenth test structures 714 has metal lines and spacessized relative to the design rules for the particular IC in which theninth test structure 714 is being used. It has been discovered that themetal lines in the tenth test structure 714 should be about the same asthe design rule for metal lines, and that the spaces should be abouttwice the design rule for spaces in a particular IC. The minimum padsize is in accordance with the design rules.

For example, if the design rules for a particular IC specify metal linesof 0.20 micron and spaces of 0.21 micron, the metal lines in the tenthtest structure 714 preferably should be about 0.20 micron, the spacesshould be about 0.42 micron, and the ground grid should be about 0.60micron. The minimum pad size is in accordance with the design rules.

In operation, if the serpentine metal line 718 is broken causing an opencircuit, the entire tenth metal pad 716 will appear dark when inspectedby e-beam testing equipment as compared to any of the tenth teststructures 714 in which there is no open circuit.

The foregoing description has described the existence of short circuitconditions resulting in the metal pad of the relevant test structureappearing bright, and the existence of open circuit conditions resultingin the in the metal pad of the relevant test structure appearing dark.It will be apparent to those skilled in the art that the bright and darkappearance can be changed and even reversed in some test equipment forthese conditions. It also will be apparent to those skilled in the artthat several of the test structures described herein can be positionedin combinations to detect both short circuit and open circuit defects inthe same general area of an IC.

Referring now to FIG. 8 therein is shown a flow chart of a method 800 oftesting an integrated circuit using an e-beam tester. The method 800includes a step 802 of providing a ground grid; a step 804 of providinga metal pad having a space therein and positioned within the groundgrid; a step 806 of providing a metal line connected to the ground gridand positioned in the space; and a step 808 of processing the integratedcircuit with the e-beam tester.

Thus, it has been discovered that the method and apparatus of thepresent invention furnish important and heretofore unavailablesolutions, capabilities, and functional advantages for performingvoltage contrast testing in integrated circuits. The resulting processand configurations are straightforward, economical, uncomplicated,highly versatile, and effective, use conventional technologies, and arethus readily suited for manufacturing integrated circuit devices thatare fully compatible with conventional manufacturing processes andtechnologies.

The present invention provides test structures that are easier to reviewand analyze thereby increasing the ability to perform failure analysisof integrated circuits.

The test structures of the present invention do not require verticalstacking. Furthermore, they can be used in the IC product itself therebyreducing or eliminating the need to use valuable space on a wafer forthe test structures.

The test structures of the present invention also are designed to testfor both open circuits and short circuits, resulting in enhancedcapability.

In addition, test structures manufactured in accordance with the presentinvention introduce less electrical noise and interference into the ICsbeing manufactured than existing test structures.

While the invention has been described in conjunction with a specificbest mode, it is to be understood that many alternatives, modifications,and variations will be apparent to those skilled in the art in light ofthe foregoing description. Accordingly, it is intended to embrace allsuch alternatives, modifications, and variations that fall within thespirit and scope of the included claims. All matters hither-to-fore setforth herein or shown in the accompanying drawings are to be interpretedin an illustrative and non-limiting sense.

1. An integrated circuit for testing using an e-beam tester comprising:a ground grid; a metal pad having a space therein and positioned withinthe ground grid; and a metal line connected to the ground grid andpositioned in the space.
 2. The integrated circuit for testing using ane-beam tester as claimed in claim 1 wherein the metal line connected tothe ground grid is a metal line that is positioned in the space and notelectrically connected to the metal pad, whereby, upon the occurrence ofan electrical short circuit between the metal line and the metal pad,the metal pad appears bright under the influence of the e-beam tester.3. The integrated circuit for testing using an e-beam tester as claimedin claim 1 wherein the metal line connected to the ground grid is ametal line that is positioned within the space and electricallyconnected to the metal pad, whereby upon the occurrence of an electricalopen circuit between the metal line and the metal pad, the metal padappears dark under the influence of the e-beam tester.
 4. The integratedcircuit for testing using an e-beam tester as claimed in claim 1 whereinthe metal line is a metal line of at least one of a T-shaped line, anobtuse-angled line, a right-angled line, a straight line, a serpentineline, an interleaved comb, and combinations thereof.
 5. The integratedcircuit for testing using an e-beam tester as claimed in claim 1 furthercomprising; a second metal pad having a space therein positioned withinthe ground grid; and a second metal line within the ground grid, whereinthe second metal line is connected to the ground grid and positionedwithin the space.
 6. An integrated circuit for testing using an e-beamtester comprising: a ground grid; a plurality of metal pads each havinga space therein and positioned within the ground grid; and a pluralityof metal lines within the ground grid, wherein each of the plurality ofmetal lines is connected to the ground grid, associated with one of theplurality of metal pads, and positioned within the space of itsassociated one of the plurality of metal pads.
 7. The integrated circuitfor testing using an e-beam tester as claimed in claim 6 wherein theplurality of metal lines within the ground grid comprises at least aportion of the plurality of metal lines that is not electricallyconnected to an associated metal pad, whereby, upon the occurrence of anelectrical short circuit between a portion of the metal lines and theassociated metal pad, the associated metal pad appears bright under theinfluence of the e-beam tester.
 8. The integrated circuit for testingusing an e-beam tester as claimed in claim 6 wherein the plurality ofmetal lines within the ground grid comprises at least a portion of theplurality of metal lines that is electrically connected to an associatedmetal pad, whereby upon the occurrence of an electrical open circuitbetween a portion of the metal lines and the associated metal pad, theassociated metal pad appears dark under the influence of the e-beamtester.
 9. The integrated circuit for testing using an e-beam tester asclaimed in claim 6 wherein the plurality of metal lines is a pluralityof metal lines of at least one of a T-shaped line, an obtuse-angledline, a right-angled line, a straight line, a serpentine line, aninterleaved comb, and combinations thereof.
 10. The integrated circuitfor testing using an e-beam tester as claimed in claim 6 wherein atleast a first portion of the plurality of metal lines is notelectrically connected to their associated metal pads; and at least asecond portion of the plurality of metal lines is electrically connectedto their associated metal pads.